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IRF3205:
The IRF3205 is a high-power N-channel MOSFET widely used in electronic circuits requiring efficient switching and power management. It boasts a low RDS(on) value of 8 mΩ, allowing minimal conduction losses and efficient operation in high-current applications. Designed to handle voltages up to 55V and continuous currents of 110A, it is ideal for motor drives, power supplies, inverters, and battery protection circuits. The IRF3205 has a fast switching speed and operates with gate voltages as low as 10V, making it compatible with standard driver circuits. Its TO-220 package ensures excellent heat dissipation and easy mounting on heat sinks. This MOSFET's robust performance and reliability make it a popular choice for demanding power electronic applications.
Pinout (TO-220 Package):
- Gate (G): Controls the MOSFET's switching.
- Drain (D): Connected to the load.
- Source (S): Connected to ground or the negative side of the circuit.
Key Features:
- Type: N-Channel MOSFET
- Maximum Drain-Source Voltage (VDS): 55V
- Continuous Drain Current (ID): 110A at 25°C
- Maximum Power Dissipation: 200W
- Gate Threshold Voltage (VGS(th)): 2.0–4.0V
- RDS(on) : 8 mΩ (at VGS = 10V)
- Operating Temperature: -55°C to 175°C
- Package: TO-220
Applications:
- DC motor controllers
- Switching regulators
- Power inverters
- Battery management systems
- High-current switching circuits
Datasheet:
{getButton} $text={Dowload Datasheet} $icon={download} $color={#346eeb}Equivalent MOSFETs:
- IRF1405
- IRF2807
- STP55NF06
- FQP50N06
Notes: When choosing an alternative, ensure compatibility with voltage, current, and RDS(on) requirements. Proper heat dissipation and a suitable driver circuit are essential for optimal performance.